Audited Supplier
WGL75P120E73
Sic
Integrated Circuits Device
Compound Semiconductor
Intrinsic Semiconductor
MCM
Digital
Inverter
Wgl75p120e73
2021+
Cetc
Carton
L122.5*W62.5mm
Cn
8504409190
Product Description
Product Photo:
Product parameter :
Features
Circuit Diagram
Package drawing
E73 Series products:
FAQ:
The CETC IGBT is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.
2.How to handle the high gate charge specified for IGBT datasheet?
The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.
3.Technical Support
In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.
Product parameter :
| Parameter | symbol | conditions | value | unit |
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25ºC | 1200 | V |
| Continuous Collector Current | IC | Tc=80ºC, Tvjmax=175ºC | 75 | A |
| Peak Collector Current | ICRM | tp=1ms | 150 | A |
| Gate-Emitter Voltage | VGES | Tvj=25ºC | ±20 | V |
| Total Power Dissipation (IGBT-inverter) | Ptot | Tc=25ºC Tvjmax=175ºC | 476 | W |
Features
- Low inductance case
- Low switching losses
- Integrated NTC temperature sensor
- Isolated baseplate
- Low Vce(sat) with Planner technology
- Vce(sat) with positive temperature coefficient
- Including fast & soft recovery anti-parallel FWD
- High short circuit capability(10us)
- Low inductance module structure
- Maximum junction temperature 175ºC
- Higher inverter output current for the same frame size
- Reduced system costs by simplification of the inverter systems
- Easy and most reliable assembly
- High inter-connection reliability
- suitable for press-in & soldering process
Applications
- Commercial, construction and agricultural vehicles (CAV)
- Motor control and drives
- Solutions for solar energy systems
- Uninterruptible Power Supply (UPS)
- Soft switching welding machine
- AC and DC servo drive amplifier
Circuit Diagram
Package drawing
E73 Series products:
| Model | Vces(V) | Ic(T=80)(A) | VCE(sat) Tj=125ºC | Eon+Eof(Tj=125)(mj) | Rthjc(KW) |
| WGL50P65E73 | 650 | 50 | 1.65 | 2.85 | 0.59 |
| WGL75P65E73 | 650 | 75 | 1.65 | 4.28 | 0.47 |
| WGL100P65E73 | 650 | 100 | 1.65 | 6.65 | 0.36 |
| WGL50P120E73 | 1200 | 50 | 1.85 | 11.88 | 0.41 |
| WGL75P120E73 | 1200 | 75 | 1.85 | 15.96 | 0.33 |
| WGL50F65E73 | 650 | 50 | 1.65 | 2.85 | 0.59 |
| WGL75F65E73 | 650 | 75 | 1.65 | 4.28 | 0.47 |
| WGL100F65E73 | 650 | 100 | 1.65 | 6.65 | 0.36 |
| WGL150F65E73 | 650 | 150 | 1.65 | 10.93 | 0.27 |
| WGL200F65E73 | 650 | 200 | 1.65 | 15.58 | 0.21 |
| WGL50F120E73 | 1200 | 50 | 1.85 | 11.88 | 0.41 |
| WGL75F120E73 | 1200 | 75 | 1.85 | 15.96 | 0.33 |
| WGL100F120E73 | 1200 | 100 | 1.85 | 17.48 | 0.20 |
| WGL150F120E73 | 1200 | 150 | 1.85 | 34.2 | 0.17 |
| WGL200F120E73 | 1200 | 200 | 1.85 | 45.2 | 0.13 |
FAQ:
1.Why is the IGBT specified for 175ºC overload?
The CETC IGBT is developed to operate at a continuous temperature of 175°C. The overload limitation is given by the package. Most of the applications are designed with an overload profile and here the IGBT is the perfect fit. The CETC IGBT provides the lowest static losses.
2.How to handle the high gate charge specified for IGBT datasheet?
The specified gate charge in the datasheet is for an operation with VGE of ± 20 V. Most customers use VGE in the range of +5.4 V to +7 V. Here the gate charge is much lower and with this value, typical switching frequencies can be addressed with standard drives.
3.Technical Support
In order to enable us to process your inquiry as efficiently as possible and ensure your case is duly reported, we kindly ask you to submit your request via our service team.
