DHD10N65
650V
10A
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-252
Power Switching Applications
DHD10n65
2021
Wxdh
WXDH
Tape & Reel
Wuxi, China
8541290000
Product Description




PARAMETER | SYMBOL | VALUE | UNIT | ||
DHB10N65/DHD10N65 | |||||
Drian-to-Source Voltage | VDSS | 650 | V | ||
Gate-to-Drian Voltage | VGSS | ±30 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 10 | A | ||
(T=100ºC) | 6.3 | A | |||
Drain Current(Pulsed) | IDM | 40 | A | ||
Single Pulse Avalanche Energy | EAS | 500 | mJ | ||
Total Dissipation | Ta=25ºC | Ptot | 1.15 | W | |
TC=25ºC | Ptot | 120 | W | ||
Junction Temperature | Tj | -55~150 | ºC | ||
storage Temperature | Tstg | -55~150 | ºC |
Features |
Fast Switching |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
used in various power switching circuit for system miniaturization and higher efficiency. |
Power switch circuit of electron ballast and adaptor. |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHB10N65 | TO-251 | DHB10N65 | Pb-free | Tube | 3000/box |
DHD10N65 | TO-252 | DHD10N65 | Pb-free | Tape & Reel | 2500/box |
