10A 650V N-Channel Enhancement Mode Power Mosfet DHD10n65 to-252

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Min Order 5000 Pieces
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Jiangsu Donghai Semiconductor Co.,Ltd

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DHD10N65
650V
10A
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-252
Power Switching Applications
DHD10n65
2021
Wxdh
WXDH
Tape & Reel
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLVALUEUNIT
DHB10N65/DHD10N65
Drian-to-Source VoltageVDSS650V
Gate-to-Drian VoltageVGSS±30V
Drain Current(continuous)ID(T=25ºC)10A
(T=100ºC)6.3A
Drain Current(Pulsed)IDM40A
Single Pulse Avalanche EnergyEAS500mJ
Total DissipationTa=25ºCPtot1.15W
TC=25ºCPtot120W
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
used in various power switching circuit for system
miniaturization and higher efficiency.
Power switch circuit of electron ballast and adaptor.
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DHB10N65TO-251DHB10N65Pb-freeTube3000/box
DHD10N65TO-252DHD10N65Pb-freeTape & Reel2500/box
 
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