180N06
60V
180A
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-247
Power Switching, Converters, Full Bridge Control
180n06
2021
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description




PARAMETER | SYMBOL | VALUE | UNIT | ||
Drian-to-Source Voltage | VDSS | 60 | V | ||
Gate-to-Source Voltage | VGSS | ±25 | V | ||
Drain Current(continuous) | ID(T=25ºC) | 180 | A | ||
(T=100ºC) | 130 | A | |||
Drain Current(Pulsed) | IDM | 720 | A | ||
Single Pulse Avalanche Energy | EAS | 800 | mJ | ||
Total Dissipation | Ta=25ºC | Ptot | 3 | W | |
TC=25ºC | Ptot | 220 | W | ||
Junction Temperature | Tj | -55~175 | ºC | ||
storage Temperature | Tstg | -55~175 | ºC |
Features |
Fast Switching |
Low ON Resistance |
Low Gate Charge |
Low Reverse Transfer Capacitances |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power switching applications |
Inverter power management system |
Power tool control |
Automotive electronics applications |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
180N06D | TO-3P | 180N06D | Pb-free | Tube | 600/box |
180N06B | TO-247 | 180N06B | Pb-free | Tube | 600/box |
