2-Inch
Ф 50.8 ± 1 mm
350 ± 25 μm
< 0.5 Ω*Cm
≤ 15 μm
GaN-FS-C-U-C50
China
Product Description
GaN single crystal substrates for RF electronics
GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance.
HEMT devices based on GaN single crystal substrates provide solutions for simultaneous high frequency, wide spectrum, high efficiency, high power density and high reliability.
Semi-insulated GaN, Fe doped, C doped

GaN-based RF devices are the most desirable semiconductor RF electronic devices to date, with the advantages of high power, high efficiency, high temperature resistance and irradiation resistance.
HEMT devices based on GaN single crystal substrates provide solutions for simultaneous high frequency, wide spectrum, high efficiency, high power density and high reliability.
Semi-insulated GaN, Fe doped, C doped

2-inch Free-standing U-GaN Substrates | ||||||||
Excellent level (S) | Production level (A) | Research level (B) | Dummy level (C) | ![]() Note: (1) Useable area: edge and macro defects exclusion (2) 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15o | ||||
S-1 | S-2 | A-1 | A-2 | |||||
Dimension | 50.8 ± 1 mm | |||||||
Thickness | 350 ± 25 μm | |||||||
Orientation flat | (1-100) ± 0.5o, 16 ± 1 mm | |||||||
Secondary orientation flat | (11-20) ± 3o, 8 ± 1 mm | |||||||
Resistivity (300K) | < 0.5 Ω·cm for N-type (Undoped; GaN-FS-C-U-C50) | |||||||
TTV | ≤ 15 μm | |||||||
BOW | ≤ 20 μm | ≤ 40 μm | ||||||
Ga face surface roughness | < 0.2 nm (polished) or < 0.3 nm (polished and surface treatment for epitaxy) | |||||||
N face surface roughness | 0.5 ~1.5 μm option: 1~3 nm (fine ground); < 0.2 nm (polished) | |||||||
Package | Packaged in a cleanroom in single wafer container | |||||||
Useable area | > 90% | >80% | >70% | |||||
Dislocation density | <9.9x105 cm-2 | <3x106 cm-2 | <9.9x105 cm-2 | <3x106 cm-2 | <3x106 cm-2 | |||
Orientation:C plane (0001) off angle toward M-axis | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) | 0.35 ± 0.15o (3 points) | |||||
Macro defect density (hole) | 0 cm-2 | < 0.3 cm-2 | < 1 cm-2 | |||||
Max size of macro defects | < 700 μm | < 2000 μm | < 4000 μm |
Q1: What's the way of shipping ?
A: We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
Q2: How to pay?
A: T/T, PayPal and etc..
Q3: What's the deliver time?
A: For inventory: the delivery time is 10 workdays. For customized products: the delivery time is 10to 25 workdays. According to the quantity.
Q4: Can I customize the products based on my need?
A: A: Yes, we can customize the specifications according to your needs.