MBR20100CT
Diode, Switching Power Supply
2021
RoHS
Discrete Device
Silicon
Mbr20100CT
to-220c
P-Type Semiconductor
100V
20A
Wxdh
WXDH
Tube
Wuxi, China
8541100000
Product Description




Features |
High junction temperature capabiliy |
Low leakage current |
Low thermal resistance |
High frequency operation |
Avalanche specification |
Applications |
Switching Power Supply |
Power Switching Circuits |
General Purpose |
PARAMETER | SYMBOL | VALUE | UNIT | ||
Peak Repetitive Reverse Voltage | VRRM | 100 | V | ||
RMS Reverse Voltage | VR(RMS) | 80 | V | ||
DC Blocking Voltage | VR | 100 | V | ||
Average Rectified Forward Current(single) | TO-220,TC=120ºC TO-220F,TC=90ºC | IF(AV) | 10 | A | |
Average Rectified Forward Current(double) | 20 | A | |||
Repetitive Peak Surge Current(single) | IFRM | 15 | A | ||
Nonrepetitive Peak Surge Current(single) | t=8.3ms | IFSM | 150 | A | |
Avalanche Energy(single) | L=1mH | EAS | 24 | mJ | |
Junction Temperature | Tj | -55~175 | ºC | ||
storage Temperature | Tstg | -55~175 | ºC |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
MBR20100CT | TO-220C | MBR20100CT | Pb-free | Tube | 1000/box |
