DHSJ21N65W
UPS, Pfc, SMPS
2023
Discrete Device
Metal-Oxide Semiconductor
Dhsj21n65W
to-247
N-Type Semiconductor
650V
21A
Wxdh
WXDH
Carton
Wuxi, China
8541290000
Product Description




Features |
Fast switching |
Low on resistance(Rdson≤0.165Ω) |
Low gate charge(Typ: 50nC) |
Low reverse transfer capacitances(Typ: 3.5pF) |
100% Single Pulse Avalanche Energy Test |
100% ΔVDS Test |
Applications |
Power factor correction(PFC). |
Switched mode power supplies(SMPS). |
Uninterruptible power supply(UPS). |
AC to DC Converters |
Telecom, SOLAR |
PARAMETER | SYMBOL | RATING | UNIT | |||
Drian-to-Source Voltage | VDSS | 650 | V | |||
Gate-to-Source Voltage | VGSS | ±30 | V | |||
Continuous Drain Current | ID TC=25ºC | 21 | A | |||
TC=100ºC | 13.2 | A | ||||
Pulsed Drain Current | IDM | 63 | A | |||
Single Pulse Avalanche Energy | EAS | 484 | mJ | |||
Power Dissipation | Ta=25ºC | Ptot | 3 | W | ||
TC=25ºC | Ptot | 151 | W | |||
Junction Temperature Range | Tj | -55~150 | ºC | |||
Storage Temperature Range | Tstg | -55~150 | ºC |
Product Specifications and Packaging Models | |||||
Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
DHSJ21N65W | TO-220C | DHSJ21N65W | Pb-free | Tube | 300/box |
