99.99%-99.9999%
Industrial
>99.99%
Lump
6N
Alloy
Non-secondary
Thermoelectric Materials, Solar Cell Material
Vacuum Packing or Argon Shield
Avaiable
1312-43-2
Lump, Ingot, Granule, Powder;Granules
Black Gray
FITECH
Vacuum Polyester Bag/ Plastic Bag
99.99%-99.9999%
China
2842909090
Product Description

Bismuth Telluride
1.Molecular formula: Bi2Te3
2.Molecular weight: 800.76
3.CAS No.: 1312-43-2
4.HS Code: 2842909090
2.Molecular weight: 800.76
3.CAS No.: 1312-43-2
4.HS Code: 2842909090
5.Melting Point: 585ºC

Bismuth telluride is a compound of tellurium and bismuth. It is a narrow gap layered semiconductor with a trigonal unit cell. It's produced by sealing bismuth and tellurium metals in a quartz tube under vacuum.
Bismuth telluride thermoelectric in lump or powder and purity 4N/5N/6N Bi2Te3 | ||||
Type P | Doped Antimony | |||
Type N | Doped Selenium | |||
Application | P/N node is formed for semiconductor refrigeration, temperature difference power generation, etc | |||
Powder Particle Size | 3 microns | |||
Technical docking | vacuum smelting -- crystal introduction (oriented growth of crystals) -- regional smelting -- removal of both ends |
Applications
Topological insulators are not conventional superconductors and cannot be used in ultra-efficient power lines because they can carry only a small amount of current, but they pave the way for a paradigm shift in the development of microchips, which will lead to new applications of sponomics in which electronic spin is used to carry information. Moreover, bismuth telluride is very easy to produce and use in practical applications. The 3D material can be manufactured by existing semiconductor technologies and is also easily doped, so that its properties can be tuned quite easily.
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