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60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247

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Jiangsu Donghai Semiconductor Co.,Ltd

Audited Supplier 4 years

Profile Certified by SGS/BV

Jiangsu, China
Winnie Gao (Ms.)
Saleman

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Product Detail

Model NO.:

DGC60F65M

Application:

Welding, UPS

Batch Number:

2023

Manufacturing Technology:

Discrete Device

Material:

Silicon

Model:

Dgc60f65m

Package:

to-247

Type:

N-Type Semiconductor

Voltage:

650V

Current:

60A

Brand:

Wxdh

Trademark:

WXDH

Transport Package:

Tube

Origin:

Wuxi, China

HS Code:

8541290000

Product Description

PARAMETER		SYMBOL	RATING	UNIT

Collector-Emitter Voltage		V_CES	650	V
Gate- Emitter Voltage		V_GES	±30	V
Collector Current		I_C(T=25ºC)	120	A
Collector Current		(Tc=100ºC)	60	A
Pulsed Collector Current		I_CM	180	A
Diode Continuous Forward Current		I_F@TC = 100 °C	60	A
Diode Pulsed Current		I_Fpuls	450	A
Total Dissipation	T_C=25ºC	P_D	428	W
	T_C=100ºC	P_D	214	W
Junction Temperature		T_j	-45~175	ºC
storage Temperature		T_stg	-45~175	ºC

Features

FS Trench Technology, Positive temperature coefficient

Low saturation voltage: V_CE(sat), typ = 1.9V
@ I_C=60A and Tj = 25 °

Extremely enhanced avalanche capabilityExtremely

Applications

Welding

Three-level inverter

UPS

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
DGC60F65M	TO-247	DGC60F65M	Pb-free	Tube	300/box

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