800V 7A N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off

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Min Order 5000 Pieces
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Jiangsu Donghai Semiconductor Co.,Ltd

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F7N80
800V
7A
Discrete Device
N-type Semiconductor
Metal-Oxide Semiconductor
to-220f
LED Power Switch Circuit, Electronic Ballast
F7n80
2022
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLVALUEUNIT
7N80/I7N80/E7N80F7N80 
Maximum Drian-Source DC VoltageVDS800V
Maximum Gate-Drain VoltageVGS±30V
Drain Current(continuous)ID(T=25ºC)7A
(T=100ºC)4A
Drain Current(Pulsed)IDM28A
Single Pulse Avalanche EnergyEAS150mJ
Peak Diode Recovery dv/dtdv/dt5V/ns
Total DissipationTa=25ºCPtot22W
TC=25ºCPtot12048W
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
 
Features
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
 
Applications
LED power switch circuit
Electronic ballast
ATX power
High voltage H bridge PWM motor drive
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
7N80TO-220C7N80Pb-freeTube1000/box
F7N80TO-220FF7N80Pb-freeTube1000/box
I7N80TO-262I7N80Pb-freeTube1000/box
E7N80TO-263E7N80Pb-freeTape & Reel800/box
 
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