Audited Supplier
OSG80R900DF To252-1
Refrigerator
2010+
Discrete Device
Element Semiconductor
ST
SMD
Analog Digital Composite and Function
N-Type Semiconductor
LED Lighting
EV Charger
Osg80r900df
To252
Orientalsemi
Orientalsemi
Carton
35x30x37cm
China
8541290000
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss. It is tailored for high power density applications to meet the highest efficiency standards.
Features
. Low RDS(ON) & FOM
. Extremely low switching loss
. Excellent stability and uniformity
Applications
. PC power
. LED lighting
. Telecom power
. Server power
. EV Charger
. Solar/UPS
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 850 | V |
| ID, pulse | 15 | A |
| RDS(ON) , max @ VGS=10V | 900 | mΩ |
| Qg | 11.7 | nC |
Marking Information
| Product Name | Package | Marking |
| OSG80R900DF | TO252 | OSG80R900D |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 800 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1) , TC=25 °C | ID | 5 | A |
| Continuous drain current1) , TC=100 °C | 3.2 | ||
| Pulsed drain current2) , TC=25 °C | ID, pulse | 15 | A |
| Continuous diode forward current1) , TC=25 °C | IS | 5 | A |
| Diode pulsed current2) , TC=25 °C | IS, pulse | 15 | A |
| Power dissipation3) , TC=25 °C | PD | 63 | W |
| Single pulsed avalanche energy5) | EAS | 160 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…640 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…640 V, ISD≤ID | dv/dt | 15 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 2 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 800 | V | VGS=0 V, ID=250 μA | ||
| 850 | VGS=0 V, ID=250 μA, Tj=150 °C | |||||
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS=VGS , ID=250 μA | |
| Drain-source on- state resistance | RDS(ON) | 0.8 | 0.9 | Ω | VGS=10 V, ID=2.5 A | |
| 2.1 | VGS=10 V, ID=2.5 A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
| - 100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 1 | μA | VDS=800 V, VGS=0 V |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 647.4 | pF | VGS=0 V, VDS=50 V, ƒ=100 kHz | ||
| Output capacitance | Coss | 36.1 | pF | |||
| Reverse transfer capacitance | Crss | 1.5 | pF | |||
| Turn-on delay time | td(on) | 31.3 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=4 A | ||
| Rise time | tr | 16.4 | ns | |||
| Turn-off delay time | td(off) | 54.6 | ns | |||
| Fall time | tf | 7.0 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 11.7 | nC | VGS=10 V, VDS=400 V, ID=4 A | ||
| Gate-source charge | Qgs | 2.8 | nC | |||
| Gate-drain charge | Qgd | 4.4 | nC | |||
| Gate plateau voltage | Vplateau | 5.8 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.3 | V | IS=5 A, VGS=0 V | ||
| Reverse recovery time | trr | 216.5 | ns | VR =400 V, IS=4 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 1.9 | μC | |||
| Peak reverse recovery current | Irrm | 17.0 | A |
Note
1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.
5) VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.
Supply Chain
Green Product Declaration
