Hot Sale 7A 650V N-Channel Enhancement Mode Power Mosfet DHD7n65 to-252b

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Min Order 5000 Pieces
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Jiangsu Donghai Semiconductor Co.,Ltd

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DHD7N65
Power Switching Circuit
2022
RoHS
Discrete Device
Metal-Oxide Semiconductor
DHD7n65
to-252b
N-Type Semiconductor
650V
7A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLVALUEUNIT
Maximum Drian-Source DC VoltageVDS650V
Maximum Gate-Drain VoltageVGS±30V
Drain Current(continuous)ID(T=25ºC)7A
(T=100ºC)4.4A
Drain Current(Pulsed)IDM28A
Single Pulse Avalanche EnergyEAS350mJ
Total DissipationTa=25ºCPtot0.8W
TC=25ºCPtot100W
Junction TemperatureTj
-55~150
ºC
storage TemperatureTstg-55~150ºC
 
Features
Fast Switching
ESD improved capability
Low on resistance(Rdson≤2.3Ω)
Low gate charge(Typ: 24nC)
Low reverse transfer capacitances(Typ: 5.5pF)
100% Single Pulse Avalanche Energy Test
100% ΔVDS Test
Applications
Used in various power switching circuit for system miniaturization and higher efficiency.
Power switch circuit of adaptor and charger.
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DHD7N65TO-252BDHD7N65Pb-freeREEL5000/box
 
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