Hot Sale Insulated Gate Bipolar Transistor Dhg20t65D IGBT to-220f

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Min Order 5000 Pieces
Shipping From Jiangsu, China
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Jiangsu Donghai Semiconductor Co.,Ltd

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DHG20T65D
Aircondition, Weldin, UPS
2022
RoHS
Discrete Device
Silicon
Dhg20t65D
to-220f
N-Type Semiconductor
Discrete Device
N-Type Semiconductor
Silicon
to-220f
Aircondition, Weldin, UPS
Dhg20t65D
2022
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES650V
Gate- Emitter VoltageVGES±20V
Collector CurrentIC(T=25ºC)40A
Collector Current (Tc=100ºC)20A
Pulsed Collector CurrentICM60A
Diode Continuous Forward CurrentI@TC = 100 °C20A
Diode Maximum Forward CurrentIFM60A
Total DissipationTC=25ºCPD96W
Junction TemperatureTj-55~150ºC
storage TemperatureTstg-55~150ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Extremely enhanced avalanche capability
Low saturation voltage: VCE(sat), typ = 1.9V
@ IC =20A and TC = 25°C
Applications
Motor Control
PFC
UPS
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
G20T65DTO-220FG20T65DPb-freeTube1000/box
 
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