Insulated Gate Bipolar Transistor IGBT G40n60d to-247 **%off

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Min Order 5000 Pieces
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Jiangsu Donghai Semiconductor Co.,Ltd

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G40N60D
Discrete Device
N-type Semiconductor
Silicon
to-247
Inverter Welding Machine, UPS
G40n60d
2021
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES600V
Gate- Emitter VoltageVGES±20V
Collector CurrentIC(T=25ºC)80A
Collector Current (Tc=100ºC)40A
Pulsed Collector CurrentICM120A
Diode Continuous Forward CurrentI@TC = 100 °C20A
Diode Maximum Forward CurrentIFM100A
Total DissipationTC=25ºCPD280W
TC=100ºCPD110W
Junction TemperatureTj150ºC
storage TemperatureTstg-55~150ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.2V
@ IC =40A and VGE=15V
Mainly used in inverter welding machine, suitable for working frequency < 70kHz.
Applications
Inverter welding machine
Solar inverter
UPS
Medium and high switching frequency inverter
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
G40N60DTO-247G40N60DPb-freeTube300/box
 
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