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K4A4G165WF-BCTD
Bipolar Integrated Circuit
MSI
Semiconductor IC
new original
22+
FBGA96
Genuine New Original
hqfp64
Box
China
8542399000
Product Description
Description
K4A4G165WF-BCTD: DRAM Chip DDR4 SDRAM 4Gbit 256Mx16 1.2V 96-Pin FBGA
Mfr. Part#: K4A4G165WF-BCTD
Mfr.:
Datasheet: 
(e-mail or chat us for PDF file)
ROHS Status: 
Quality: 100% Original
Warranty: ONE YEAR
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8542.32.00.36 |
| Automotive | No |
| PPAP | No |
| DRAM Type | DDR4 SDRAM |
| Chip Density (bit) | 4G |
| Organization | 256Mx16 |
| Number of Internal Banks | 16 |
| Number of Words per Bank | 16M |
| Number of Bits/Word (bit) | 16 |
| Data Bus Width (bit) | 16 |
| Maximum Clock Rate (MHz) | 2666 |
| Interface Type | POD |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Temperature (°C) | 85 |
| Supplier Temperature Grade | Commercial |
| Number of I/O Lines (bit) | 16 |
| Mounting | Surface Mount |
| Package Height | 0.98(Max) |
| Package Width | 10.3 |
| Package Length | 13.3 |
| PCB changed | 96 |
| Standard Package Name | BGA |
| Supplier Package | FBGA |
| Pin Count | 96 |
| Lead Shape | Ball |
The 4Gb DDR4 SDRAM F-die is organized as a 32Mbit x 16 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 3200Mb/sec/pin (DDR4-3200) for general applications. The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration, On Die Termination using ODT pin and Asynchronous Reset. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS multiplexing style. The DDR4 device operates with a single 1.2V (1.14V~1.26V) power supply, 1.2V(1.14V~1.26V) VDDQ and 2.5V (2.375V~2.75V) VPP. The 4Gb DDR4 F-die device is available in 96ball FBGAs(x16).
Why choosing us
- Located in Shenzhen, the electronic market center of China.
- 100% guarantee components quality: Genuine Original.
- Sufficient stock on your urgent demand.
- Sophisticated colleagues help you solve problems to reduce your risk with on-demand manufacturing
- Faster shipment: In stock components can ship the same day .
- 24 Hours service
Notice:
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- You can contact sales person to apply for a better price.
- For more products, Pls do not hesitate to contact our Sales team.
