Mosfet
RoHS, CE, ISO, CCC, SGS
GT
Remote Cut-Off Shielding Tube
Naturally Cooled Tube
High Back Pressure Transistor, Microwave Transistor, Switch Transistor
High Frequency
IGBT
Chip Transistor
High Power
Silicon
ZG
by Sea, Packing
T0-247, T0-3P, T0-220, T0-220F, T0-263
Auhui Province, China
8541100000
Product Description



Parameter | Symbol | Value | Unit | |
- Drain-Source Voltage | VDSS | 650 | V | |
Continues Drain Current | ID | Tc=25ºC | 7* | A |
Tc=100ºC | 4.0* | |||
( 1) Plused Drain Current (note 1) | IDM | 25 | A | |
Gate-to-Source Voltage | VGS | ±30 | V | |
( 2) Single Pulsed Avalanche Energy (note 2) | EAS | 400 | mJ | |
( 1) Avalanche Current (note 1) | IAR | 7.0 | A | |
( 1) Repetitive Avalanche Energy (note 1) | EAR | 14.5 | mJ | |
( 3) Peak Diode Recovery (note 3) | dv/dt | 4.5 | V/ns | |
Power Dissipation | PD Tc=25ºC | TO-220/TO-262 | 147 | W |
TO-220F | 48 | |||
Power Dissipation Derating Factor | PD(DF) Above 25ºC | TO-220/TO-262 | 1.18 | W/ºC |
TO-220F | 0.38 | |||
Operating and Storage Temperature Range | TJ,TSTG | 150,-55~+150 | ºC | |
Maximum Temperature for Soldering | TL | 300 | ºC |


Parameter | Symbol | Max | Unit | |
Thermal Resistance,Junction to Case | Rth(j-c) | TO-220/TO-262 | 0.85 | W |
TO-220F | 2.6 | |||
Thermal Resistance,Junction to Ambient | Rth(j-A) | TO-220/TO-262 | 62.5 | W/ºC |
TO-220F | 62.5 |
Off-Characteristics | ||||||
Parameter | Symbol | Tests Conditions | Min | Type | Max | Unit |
- Drain-Source Breakdown Voltage | BVDSS | ID=250μA, VGS=0V | 650 | - | - | V |
Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | ID=250μA, referenced to 25ºC | - | 0.7 | - | V/ºC |
Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V, TC=25ºC | - | - | 1 | μA |
VDS=520V, TC=125ºC | - | - | 10 | |||
Gate-body leakage current, forward | IGSSF | VDS=0V, VGS =30V | - | - | 100 | nA |
Gate-body leakage current, reverse | IGSSR | VDS=0V, VGS = -30V | - | - | -100 | nA |
On-Characteristics | ||||||
Parameter | Symbol | Tests Conditions | Min | Type | Max | Unit |
Gate Threshold Voltage | VGS(th) | VDS = VGS , ID=250μA | 2.0 | - | 4.0 | V |
Static Drain-Source On-Resistance | RDS(ON) | VGS =10V , ID=3.5A | - | 1.2 | 1.5 | Ω |
Forward Transconductance | gfs | VDS = 40V, ID=3.5A(note4) | - | 6.5 | - | S |
Dynamic Characteristics | ||||||
Parameter | Symbol | Tests Conditions | Min | Type | Max | Unit |
Input capacitance | Ciss | VDS=25V, VGS =0V, f=1.0MHZ | - | 960 | 1890 | pF |
Output capacitance | Coss | - | 95 | 178 | pF | |
Reverse transfer capacitance | Crss | - | 13 | 20 | pF |

