New Original to-220f 7A 680V N-Channel Mosfet Transistor 7n65

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Jiangsu Zhongxin Semiconductor Co., Ltd.

VIP   Audited Supplier 8 years
Profile Certified by SGS/BV
Mosfet
RoHS, CE, ISO, CCC, SGS
GT
Remote Cut-Off Shielding Tube
Naturally Cooled Tube
High Back Pressure Transistor, Microwave Transistor, Switch Transistor
High Frequency
IGBT
Chip Transistor
High Power
Silicon
ZG
by Sea, Packing
T0-247, T0-3P, T0-220, T0-220F, T0-263
Auhui Province, China
8541100000
Product Description

Parameter

Symbol

Value

Unit
-
Drain-Source Voltage
VDSS650V

Continues Drain Current
IDTc=25ºC7*A
Tc=100ºC4.0*
( 1)
Plused Drain Current (note 1)
IDM25A

Gate-to-Source Voltage
VGS±30V
( 2)
Single Pulsed Avalanche Energy (note 2)
EAS400mJ
( 1)
Avalanche Current (note 1)
IAR7.0A
( 1)
Repetitive Avalanche Energy (note 1)
EAR14.5mJ
( 3)
Peak Diode Recovery (note 3)
dv/dt4.5V/ns

Power Dissipation
PD
Tc=25ºC
TO-220/TO-262147W
TO-220F48

Power Dissipation Derating Factor
PD(DF)
Above 25ºC
TO-220/TO-2621.18W/ºC
TO-220F0.38
 
Operating and Storage Temperature Range
TJ,TSTG150,-55~+150ºC

Maximum Temperature for Soldering
TL300ºC
ZG7N65 is an N-channel enhancement mode MOSFET, which is produced using Zhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for higher efficiency and system miniaturization.

Parameter

Symbol

Max

Unit

Thermal Resistance,Junction to Case
Rth(j-c)TO-220/TO-2620.85W
TO-220F2.6

Thermal Resistance,Junction to Ambient
Rth(j-A)TO-220/TO-26262.5W/ºC
TO-220F62.5
  Off-Characteristics

Parameter

Symbol

Tests Conditions

Min

Type

Max

Unit
-
Drain-Source Breakdown Voltage
BVDSSID=250μA, VGS=0V650--V

Breakdown Voltage Temperature Coefficient
△BVDSS/△TJID=250μA, referenced to 25ºC-0.7-V/ºC
 
Zero Gate Voltage Drain Current
IDSSVDS=650V,VGS=0V, TC=25ºC--1μA
VDS=520V, TC=125ºC--10

Gate-body leakage current, forward
IGSSFVDS=0V, VGS =30V--100nA

Gate-body leakage current, reverse
IGSSRVDS=0V, VGS = -30V---100nA
  On-Characteristics

Parameter

Symbol

Tests Conditions

Min

Type

Max

Unit

Gate Threshold Voltage
VGS(th)VDS = VGS , ID=250μA2.0-4.0V

Static Drain-Source On-Resistance
RDS(ON)VGS =10V , ID=3.5A-1.21.5Ω

Forward Transconductance
gfsVDS = 40V, ID=3.5A(note4)-6.5-S
  Dynamic Characteristics

Parameter

Symbol

Tests Conditions

Min

Type

Max

Unit

Input capacitance
CissVDS=25V, VGS =0V, f=1.0MHZ-9601890pF

Output capacitance
Coss-95178pF

Reverse transfer capacitance
Crss-1320pF
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