Audited Supplier
IGBT-SiC Diode TO247-4L OST80N65H4EWF
RoHS, ISO
Metal Porcelain Tube
Sharp Cutoff Shielding Tube
Air Cooled Tube
Switch Transistor
High Frequency
Planar
Chip Transistor
High Power
Silicon
Orientalsemi
Carton
35x30x37cm
China
8541290000
Product Description
General Description
OST80N65H4EWF uses advanced Oriental-Semi's patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low VCE(sat), low gate charge, and excellent switching performance. This device is suitable for mid to high range switching frequency converters.
Features
Advanced TGBTTM technology
Excellent conduction and switching loss
Excellent stability and uniformity
Fast and soft antiparallel SiC diode
Applications
Induction converters
Uninterruptible power supplies
Key Performance Parameters
| Parameter | Value | Unit |
| VCES, min @ 25 °C | 650 | V |
| Maximum junction temperature | 175 | °C |
| IC, pulse | 320 | A |
| VCE(sat), typ @ VGE=15 V | 1.5 | V |
| Qg | 168 | nC |
Absolute Maximum Ratings at Tvj=25 °C unless otherwise noted
| Parameter | Symbol | Value | Unit |
| Collector emitter voltage | VCES | 650 | V |
| Gate emitter voltage | VGES | ±20 | V |
| Transient gate emitter voltage, TP≤10 µs, D<0.01 | ±30 | V | |
| Continuous collector current1) , TC=25 °C | IC | 114 | A |
| Continuous collector current1) , TC=100 °C | 80 | A | |
| Pulsed collector current2) , TC=25 °C | IC, pulse | 320 | A |
| Diode forward current1) , TC=25 °C | IF | 80 | A |
| Diode forward current1) , TC=100 °C | 60 | A | |
| Diode pulsed current2) , TC=25 °C | IF, pulse | 240 | A |
| Power dissipation3) , TC=25 °C | PD | 395 | W |
| Power dissipation3) , TC=100 °C | 198 | W | |
| Operation and storage temperature | Tstg, Tvj | -55 to 175 | °C |
| Short circuit withstand time VGE =15 V, VCC≤400 V Allowed number of short circuits<1000 Time between short circuits:≥1.0 S Tvj =150 °C | SC | 5 | μs |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| IGBT thermal resistance, junction-case | RθJC | 0.38 | °C/W |
| Diode thermal resistance, junction-case | RθJC | 0.65 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 40 | °C/W |
Electrical Characteristics at Tvj=25 °C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Collector-emitter breakdown voltage | V(BR)CES | 650 | V | VGE =0 V, IC =0.5 mA | ||
Collector-emitter saturation voltage | VCE(sat) | 1.5 | 1.8 | V | VGE =15 V, IC=80 A Tvj=25 °C | |
| 1.7 | V | VGE =15 V, IC=80 A, Tvj=125 °C | ||||
| 1.85 | VGE =15 V, IC=80 A, Tvj=175 °C | |||||
| Gate-emitter threshold voltage | VGE(th) | 3.5 | 4.5 | 5.5 | V | VCE =VGE , ID =0.5 mA |
Diode forward voltage | VF | 2.2 | V | VGE =0 V, IF =40 A Tvj=25 °C | ||
| 2.8 | VGE =0 V, IF =40 A, Tvj=125 °C | |||||
| 3.4 | VGE =0 V, IF =40 A, Tvj=175 °C | |||||
| Gate-emitter leakage current | IGES | 100 | nA | VCE =0 V, VGE=20 V | ||
| Zero gate voltage collector current | ICES | 50 | μA | VCE =650 V, VGE =0 V |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 168 | nC | VGE =15 V, VCC=520 V, IC=80 A | ||
| Gate-emitter charge | Qge | 74 | nC | |||
| Gate-collector charge | Qgc | 30 | nC |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode reverse recovery time | trr | 41 | ns | VR=400 V, IF=80 A, diF/dt=500 A/μs | ||
| Diode reverse recovery charge | Qrr | 141 | nC | |||
| Diode peak reverse recovery current | Irrm | 7 | A |
Note
1) Calculated continuous current based on maximum allowable junction temperature.
2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
Ordering Information
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO247-4L-S | 30 | 15 | 450 | 4 | 1800 |
Product Information
| Product | Package | Pb Free | RoHS | Halogen Free |
| OST80N65H4EWF | TO247-4L | yes | yes | yes |
Green Produc
t
Declaration
