Silicon NPN Triple Diffused Transistor 5200 to-3pl **%off

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Min Order 5000 Pieces
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Jiangsu Donghai Semiconductor Co.,Ltd

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5200
Power Amplifier Applications
2022
Discrete Device
Silicon
2sc5200
to-3pl
N-Type Semiconductor
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Base VoltageVCBO230V
Collector- Emitter VoltageVCEO230V
Emitter-Base VoltageVEBO5V
Collector Current Ic15A
Base CurrentIB1.5A
3PN Collector DissipationTC=25ºCPC120W
3PL Collector DissipationTC=25ºCPC160W
Junction TemperatureTj150ºC
storage TemperatureTstg-55~150ºC
 
Features
High collector voltage:VCEO=230V (min)
Complementary to1943
Recommended for 100-W high-fidelity audio
frequency amplifier output
RoHS product
Applications
Power Amplifier Applications
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameHalogen FreePackageWeight 
5200TO-3PN5200NOTube5.73g(typ)
5200TO-3PL5200NOFoam Box9.73g(typ)
 
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