TV Sets and Monitors Diodes

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Jiangsu Zhongxin Semiconductor Co., Ltd.

VIP   Audited Supplier 8 years
Profile Certified by SGS/BV
BY398
Plastic Sealed Transistor
Electronic Products
RoHS, CE, ISO, CCC
Standard
Gray,Black
Alloy
Silicon
Copper
ZG Brand
by Sea, Packaging
DO-27
Auhui Province, China
8541100000
Product Description



Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), its working frequency under 3 KHZ.
Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency (such as mains frequency 50 hz), the working frequency is lower than 3 kHz, when work in a few to several hundred kHz frequency, voltage change direction, time to slow recovery time, ordinary rectifier diode can't normal to achieve single wizard, then with quick restore fast recovery rectifier diode.
The characteristics of fast recovery diode is its recovery time is short, this feature makes it suitable for high frequency (such as the TV line frequency) of the rectifier.Have a fast recovery diode determines the performance of the important parameters of reverse recovery time.Reverse recovery time is defined as sharp transition to the diode to the from state by state, since output pulse down to zero, to reverse the power back to the maximum 10% of the time required to reverse current, commonly used symbols TRR said.Ordinary fast recovery rectifier diode TRR Andrew bynum for a few seconds (10-9 s), super fast recovery diode TRR general for dozens of nanoseconds.The smaller the Trr fast recovery diode work frequency is higher.
 
 SYMBOLSVALUEUNITS
Zener Current see Table Characteristics   
Power Dissipation at Tamb=25.C(Note 1)Ptot500mW
Junction TemperatureTj200o C
Storage Temperature RangeTSTG-65  to + 200o C
Thermal resistance junction ambient(Note 1)RθJA0.3K/mW
Forward voltage at IF=200mAVF1.1V


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