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Transistor Enhancement To252 Osg80r1K4df Vds-850V ID-12A RDS (ON) -1.4ohm Qg-7.5nc for LED Lighting PC Power Telecom Power N-Channel Power Mosfet

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Min Order	2500 Pieces
Shipping From	Shanghai, China
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Shanghai Winture Electric Co., Ltd.

Audited Supplier 3 years

Profile Certified by SGS/BV

Shanghai, China
Joy Li (Ms.)

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Product Detail

Model NO.:

TO252 OSG80R1K4DF

Certification:

RoHS, ISO

Shape:

Metal Porcelain Tube

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Origin:

China

HS Code:

8541290000

Product Description

General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability .
The GreenMOS® Generic series is optimized for extreme switching performance to minimize switching loss . It is tailored for high power density applications to meet the highest efficiency standards .

Features
     Low RDS(ON) & FOM
     Extremely low switching loss
     Excellent stability and uniformity

Applications
     PC power
     LED lighting
     Telecom power
     Server power
     EV Charger
     Solar/UPS

Key Performance Parameters

Parameter	Value	Unit
VDS, min @ Tj(max)	850	V
ID, pulse	12	A
RDS(ON) , max @ VGS=10V	1.4	Ω
Qg	7.5	nC

Absolute Maximum Ratings at Tj=25°C unless otherwise noted

Parameter	Symbol	Value	Unit
Drain-source voltage	VDS	800	V
Gate-source voltage	VGS	±30	V
Continuous drain current1) , TC=25 °C	ID	4	A
Continuous drain current1) , TC=100 °C	ID	2.5	A
Pulsed drain current2) , TC=25 °C	ID, pulse	12	A
Continuous diode forward current1) , TC=25 °C	IS	4	A
Diode pulsed current2) , TC=25 °C	IS, pulse	12	A
Power dissipation3) , TC=25 °C	PD	37	W
Single pulsed avalanche energy5)	EAS	100	mJ
MOSFET dv/dt ruggedness, VDS=0…640 V	dv/dt	50	V/ns
Reverse diode dv/dt, VDS=0…640 V, ISD≤ID	dv/dt	15	V/ns
Operation and storage temperature	Tstg , Tj	-55 to 150	°C

Ordering Information

Package Type	Units/ Reel	Reels/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO252-J	2500	2	5000	5	25000
TO252-P	2500	2	5000	5	25000

Product Information

Product	Package	Pb Free	RoHS	Halogen Free
OSG80R1K4DF	TO252	yes	yes	yes

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