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Jiangsu Donghai Semiconductor Co.,Ltd  

Mosfets, Diodes, IGBT, Transistor, Thyristor, IC, SIC Mosfet, SIC Diode

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MadeInChina.com > Jiangsu Donghai Semiconductor Co.,Ltd > Product > 60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247
Product

60A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc60f65m to-247

价格 $1.50对比
发货 Jiangsu
销量 暂无
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数量
+-
库存500000Pieces   起订5000Pieces
IP UnknownLearn More
DGC60F65M
Welding, UPS
2023
Discrete Device
Silicon
Dgc60f65m
to-247
N-Type Semiconductor
650V
60A
Wxdh
WXDH
Tube
Wuxi, China
8541290000
Product Description
PARAMETERSYMBOLRATINGUNIT
 
Collector-Emitter VoltageVCES650V
Gate- Emitter VoltageVGES±30V
Collector CurrentIC(T=25ºC)120A
Collector Current (Tc=100ºC)60A
Pulsed Collector CurrentICM180A
Diode Continuous Forward CurrentI@TC = 100 °C60A
Diode Pulsed CurrentIFpuls450A
Total DissipationTC=25ºCPD428W
TC=100ºCPD214W
Junction TemperatureTj-45~175ºC
storage TemperatureTstg-45~175ºC
 
Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.9V
@ IC =60A and Tj = 25 °
Extremely enhanced avalanche capabilityExtremely
Applications
Welding
Three-level inverter
UPS
 
Product Specifications and Packaging Models
Product ModelPackage TypeMark NameRoHSPackageQuantity
DGC60F65MTO-247DGC60F65MPb-freeTube300/box