MadeInChina.com > Video> Electrical & Electronics > Electronic Tube & Transistor > Other Electronic Tubes & Transistors

Sic Diode To247 Ost75n65hswf Vces-650V Maximum Junction Temperature175, N-Channel Power IGBT

2025-04-09 3240

Sic Diode To247 Ost75n65hswf Vces-650V Maximum Junction Temperature175, N-Channel Power IGBT
324 views

To247 Ost30n65hmf Vces-650V Maximum Junction Temperature175, Pulse-120A Vce (sat) -1.5V N-Channel Power IGBT
477 views

Vds-650V ID-108A RDS (ON) -99ohm N-Channel Power Mosfet
419 views

To247 Ost90n65hm2f Vces-650V Maximum Junction Temperature175, IC, Pulse-360A N-Channel Power IGBT
273 views

EV Charger Solar/UPS To220f Osg80r380FF Vds-850V ID-33A RDS (ON) -380milliohm Qg-22.2nc Mode N-Channel Power Mosfet
248 views

Product Specifications

Model NO.:

IGBT-Sic Diode To247 OST75N65HSWF

Certification:

RoHS, ISO

Shape:

Metal Porcelain Tube

Shielding Type:

Sharp Cutoff Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Transport Package:

Carton

Specification:

35x30x37cm

Origin:

China

HS Code:

8541290000

Like 0 Dislike 0 Comment 0

More>Recommended Video

Gas Discharge Tube Manufacturer Support Customized 75V to 1000V Gdt

490

Gas Discharge Tube Manufacturer Support Customized 75V to 1000V Gdt

To247 Ost30n65hmf Vces-650V Maximum Junction Temperature175, Pulse-120A Vce (sat) -1.5V N-Channel Power IGBT

477

To247 Ost30n65hmf Vces-650V Maximum Junction Temperature175, Pulse-120A Vce (sat) -1.5V N-Channel Power IGBT

8*8mm Switching Spark Gap Gas Discharge Tube Switch Discharge Tube

246

8*8mm Switching Spark Gap Gas Discharge Tube Switch Discharge Tube

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

246

High Quality Transistors Fgh40n60SMD To247 600V 40A 40n60 IGBT Tube Fgh40n60

Vds-650V ID-108A RDS (ON) -99ohm N-Channel Power Mosfet

419

Vds-650V ID-108A RDS (ON) -99ohm N-Channel Power Mosfet

Current Transducer HLSR-P series IPN = 10 ... 50 A DC, AC, pulsed MOSFET Fetures Applications Diode LEM-HLSR10-P

448

Current Transducer HLSR-P series IPN = 10 ... 50 A DC, AC, pulsed MOSFET Fetures Applications Diode LEM-HLSR10-P

To247 Ost90n65hm2f Vces-650V Maximum Junction Temperature175, IC, Pulse-360A N-Channel Power IGBT

273

To247 Ost90n65hm2f Vces-650V Maximum Junction Temperature175, IC, Pulse-360A N-Channel Power IGBT

288

833A for Glass Vacuum Tube

Switching Spark Gap 600V Discharge Tube Gdt

386

Switching Spark Gap 600V Discharge Tube Gdt

Qcm4045 Photovoltaic Diode Photovoltaic Solar Cell Protection Schottky Diode

316

Qcm4045 Photovoltaic Diode Photovoltaic Solar Cell Protection Schottky Diode

C106 C106m C106mg 4A 600V 0.5W to-126 Thyristor SCR Transistor

475

C106 C106m C106mg 4A 600V 0.5W to-126 Thyristor SCR Transistor