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To247-4L Ost50n65h4ewf Vces-650V Maximum Junction Temperature175 Pulse-200A Vce (sat) -1.4V Qg-104nc IGBT

Name: To247-4L Ost50n65h4ewf Vces-650V Maximum Junction Temperature175 Pulse-200A Vce (sat) -1.4V Qg-104nc IGBT
Uploaded: 2025-03-19T08:29:27+08:00

2025-04-09 4330IP Unknown

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Product Specifications

Model NO.:

cIGBT-Sic Diode TO247-4L OST50N65H4EWF

Certification:

RoHS, ISO

Shape:

GT

Shielding Type:

Remote Cut-Off Shielding Tube

Cooling Method:

Air Cooled Tube

Function:

Switch Transistor

Working Frequency:

High Frequency

Structure:

Planar

Encapsulation Structure:

Chip Transistor

Power Level:

High Power

Material:

Silicon

Trademark:

Orientalsemi

Origin:

China

HS Code:

8541290000

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